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| STD2HNK60Z - STD2HNK60Z-1 STF2HNK60Z - STQ2HNK60ZR-AP N-channel 600V - 4.4 - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESHTM Power MOSFET General features Type STD2HNK60Z STD2HNK60Z-1 STF2HNK60Z STQ2HNK60ZR-AP VDSS 600V 600V 600V 600V RDS(on) <4.8 <4.8 <4.8 <4.8 ID 2A 2A 2A 0.5A PTOT 45W 45W 20W 3W 2 1 3 3 1 IPAK DPAK Gate charge minimized 100% avalanche tested Extremely high dv/dt capability ESD improved capability New high voltage benchmark 1 3 2 TO-92 (Ammopack) TO-220 Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmeshTM products. Internal schematic diagram Applications Switching application Order codes Sales Type STD2HNK60Z STD2HNK60Z-1 STF2HNK60Z STQ2HNK60ZR-AP Marking D2HNK60Z D2HNK60Z F2HNK60Z Q2HNK60ZR Package DPAK IPAK TO-220FP TO-92 Packaging Tape & reel Tube Tube Ammopak March 2006 Rev 4 1/16 www.st.com 16 Contents: STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Contents: 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/16 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID ID IDM (1) Absolute maximum ratings Value Parameter IPAK/DPAK TO-220FP TO-92 Drain-Source Voltage (VGS = 0) Drain-gate Voltage (R GS = 20k) Gate-Source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC=100C Drain Current (pulsed) Total Dissipation at T C = 25C Derating Factor 2.0 1.26 8 45 0.36 600 600 30 2.0 1.26 8 20 0.16 2000 -2500 4.5 -55 to 150 300 260 -0.5 0.32 2 3 0.025 V V V A A A W W/C V V V/ns C C Unit PTOT VESD(G-S) Gate Source ESD (HBM-C=100pF, R=1.5k) VISO dv/dt(2) TJ Tstg Tl Insulation withstand voltage (DC) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Maximum lead temperature for soldering purpose 1. Pulse width limited by safe operating area 2. ISD 2A, di/dt 200A/s, VDD =80%V(BR)DSS Table 2. Thermal data IPAK/DPAK TO-220FP TO-92 Rthj-case Rthj-amb Rthj-lead Thermal resistance junction-case Max Thermal resistance junction-ambient Max Thermal resistance junction-lead Max 2.77 100 -- 6.25 62.5 -- -120 40 C/W C/W C/W Table 3. Symbol IAR EAS Avalanche data Parameter Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (starting Tj=25C, ID=IAR, VDD=50V) Value 2 120 Unit A mJ 3/16 Electrical characteristics STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS On/off states Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Test Condictions ID = 1mA, V GS= 0 VDS = Max Rating, VDS = Max Rating,Tc=125C Min. 600 1 50 10 Typ. Max. Unit V A A nA V IGSS VGS(th) RDS(on) Gate Body Leakage Current VGS = 20V (V DS = 0) Gate Threshold Voltage Static Drain-Source On Resistance VDS= VGS, ID = 50A VGS= 10V, ID= 1.0A 3 3.75 4.4 4.5 4.8 Table 5. Symbol gfs (1) Ciss Coss Crss Coss eq(2) Qg Qgs Qgd Dynamic Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Condictions VDS =15V, ID = 1.0A Min. Typ. 1.5 280 38 7 30 11 2.25 6 15 Max. Unit S pF pF pF pF nC nC nC VDS =25V, f=1 MHz, VGS=0 VGS=0, V DS =0V to 480V VDD=480V, ID = 2.0A VGS =10V (see Figure 18) 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on Delay Time Rise Time Test Condictions VDD =300V, ID=1.0A, RG=4.7, VGS=10V (see Figure 17) VDD =300V, ID=1.0A, RG=4.7, VGS=10V (see Figure 17) Min. Typ. 10 30 Max. Unit ns ns Turn-off Delay Time Fall Time 23 50 ns ns Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain Current Source-drain Current (pulsed) Forward on Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=2.0A, V GS=0 ISD=2.0A, di/dt = 100A/s, VDD=20 V, Tj=25C 178 445 5 200 500 5 Test Condictions Min. Typ. Max. 2.0 8.0 1.3 Unit A A V ns nC A ns nC A ISD=2.0A, di/dt = 100A/s, VDD=20 V, Tj=150C 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% 5/16 Electrical characteristics STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-92 Figure 2. Thermal impedance for TO-92 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Safe operating area for IPAK/DPAK Figure 6. Thermal impedance for IPAK/DPAK 6/16 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Figure 7. Output characterisics Figure 8. Electrical characteristics Transfer characteristics Figure 9. Normalized BVDSS vs temperature Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 7/16 Electrical characteristics STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Figure 14. Normalized on resistance vs temperature Figure 13. Normalized gate threshold voltage vs temperature Figure 15. Source-drain diode forward characteristics Figure 16. Maximum avalanche energy vs temperature 8/16 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Test circuit 3 Test circuit Figure 18. Gate charge test circuit Figure 17. Switching times test circuit for resistive load Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform 9/16 Package mechanical data STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Package mechanical data TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 G 11/16 Package mechanical data STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 12/16 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Package mechanical data TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 13/16 Package mechanical data STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP TO-92 AMMOPACK mm. MIN. 4.45 3.30 TYP MAX. 4.95 3.94 1.6 2.3 0.41 12.5 5.65 2.44 -2 17.5 5.7 8.5 18.5 15.5 3.8 16 4 18 6 9 12.7 6.35 2.54 0.56 12.9 7.05 2.94 2 19 6.3 9.25 0.5 20.5 16.5 25 4.2 0.9 11 3 -1 1 0.11 -0.04 0.04 0.15 0.157 0.72 0.61 0.63 0.016 0.49 0.22 0.09 -0.08 0.69 0.22 0.33 0.71 0.23 0.35 0.5 0.25 0.1 MIN. 0.170 0.130 inch TYP. MAX. 0.194 0.155 0.06 0.09 0.022 0.51 0.27 0.11 0.08 0.74 0.24 0.36 0.02 0.80 0.65 0.98 0.16 0.035 0.43 DIM. A1 T T1 T2 d P0 P2 F1, F2 delta H W W0 W1 W2 H H0 H1 D0 t L l1 delta P 14/16 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Revision history 5 Revision history Table 8. Date 09-Mar-2004 23-Mar-2004 02-Apr-2005 06-Mar-2006 Revision history Revision 1 2 3 4 First release Modified title Complete version Inserted DPAK. New template Changes 15/16 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 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